STP20N60M2-EP

Obsolete
Design Win

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

  • All features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STP20N60M2-EP

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