STP20N60M2-EP

NRND
Design Win

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

  • All features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STP20N60M2-EP

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STP20N60M2-EP
NRND
TO-220 Industrial Ecopack2

STP20N60M2-EP

Package:

TO-220

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (EU)
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STP20N60M2-EP Available at distributors

Distributor availability of STP20N60M2-EP

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NRND
EAR99 NEC Tube TO-220 - - CHINA

STP20N60M2-EP NRND

Package:
TO-220
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STP20N60M2-EP

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors