This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP20N60M2-EP
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STP20N60M2-EP|| distributors |
Distributor availability of STP20N60M2-EP
Distributor reported inventory date:
| Buy from Distributor || |
Operating Temperature (°C)
Country of Origin:
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors