These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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Quality and Reliability
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RoHS Compliance Grade
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Sample & Buy
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|STP22NM60N|| 4 distributors |
Distributor availability ofSTP22NM60N
Distributor reported inventory date: 2020-08-04
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