These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
- Industry’s lowest RDS(on) * area
- Industry's best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
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