These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
- 100% avalanche tested
- Very low intrinsic capacitances
- Gate charge minimized
- Switching application
- Very good manufacturing repeatability
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Choose among our MDmesh MOSFET Series, featuring fast recovery diode (DK5) and very high voltage super-junction MOSFETs (K5).
Recommended for you
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP5NK80ZFP
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STP5NK80ZFP|| distributors |
Distributor availability of STP5NK80ZFP
Distributor reported inventory date:
| Buy from Distributor || |
Operating Temperature (°C)
Country of Origin:
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors