Product overview
Description
This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
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All features
- RDS(on) * Qg industry benchmark
- Very low switching gate charge
- Extremely low on-resistance RDS(on)
- Low gate drive power losses
- High avalanche ruggedness
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS10DN3LH5
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STS10DN3LH5 | NRND | SO-8 | Industrial | Ecopack2 | - | - |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STS10DN3LH5 | | | distributors No availability of distributors reported, please contact our sales office |
STS10DN3LH5 NRND
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors