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STS8DN6LF6AG
Obsolete
Design Win
Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

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Product overview

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

  • All features

    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    • Logic level
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STMicroelectronics - STS8DN6LF6AG

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SPICE models (1)

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STS8DN6LF6AG PSpice model
1.0 31 Jan 2017
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31 Jan 2017
STS8DN6LF6AG PSpice model 1.0

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