Product overview
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.-
All features
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STT5N2VH5
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STT5N2VH5 | NRND | SOT23-6L | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
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| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STT5N2VH5 | No availability of distributors reported, please contact our sales office | NRND | EAR99 | NEC | Tape and Reel | SOT23-6L | - | - | CHINA | | ||
No availability of distributors reported, please contact our sales office
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors