Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package

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  • This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

    Key Features

    • Designed for automotive applications and AEC-Q101 qualified
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STW19NM60N TO-247 Tube
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STW19NM60N

Package

TO-247

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS9550
      Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
      2.0
      1,021.26 KB
      PDF
      DS9550

      Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STW19NM60N PSpice model 1.0
      10.23 KB
      ZIP

      STW19NM60N PSpice model

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW19NM60N
Active
TO-247 Automotive Ecopack2

STW19NM60N

Package:

TO-247

Material Declaration**:

Marketing Status

Active

Package

TO-247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.