N-Channel 500V - 0.045 Ohm - 60A Max247(TM) Zener-Protected MDmesh(TM) Power MOSFET

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  • The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products.

    Key Features

    • INDUSTRYS LOWEST ON-RESISTANCE
    • TIGHT PROCESS CONTROL
    • TYPICAL RDS(on) = 0.045
    • IMPROVED ESD CAPABILITY
    • HIGH dv/dt AND AVALANCHE CAPABILITIES
    • LOW GATE INPUT RESISTANCE
    • LOW INPUT CAPACITANCE AND GATE CHARGE

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STY60NM50 Max247 Tube
Active
- - EAR99 CHINA No availability of distributors reported, please contact our sales office

STY60NM50

Package

Max247

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS2233
      N-channel 500V - 0.045 Ω - 60A Max247 Zener-protected MDmesh™ Power MOSFET
      5.4
      286.11 KB
      PDF
      DS2233

      N-channel 500V - 0.045 Ω - 60A Max247 Zener-protected MDmesh™ Power MOSFET

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STY60NM50 PSpice model (.lib) 1.0
      565 Byte(s)
      ZIP

      STY60NM50 PSpice model (.lib)

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STY60NM50
Active
Max247 Industrial Ecopack2

STY60NM50

Package:

Max247

Material Declaration**:

Marketing Status

Active

Package

Max247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.