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  • The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.

    The PD55003’s superior linearity performance makes it an ideal solution for car mobile radios.
    The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC-approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
    Mounting recommendations are provided in application note AN1294, available on www.st.com.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V

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Technical Documentation

    • Description Version Size Action
      DS4709
      RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
      4.1
      469.34 KB
      PDF
      DS4709

      RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

    • Description Version Size Action
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package