PD55003L-E

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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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Product overview

Description

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LD-MOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD55003L-E’s superior linearity performances makes it an ideal solution for car mobile radio.

  • All features

    • Excellent thermal stability
    • Common source configuration
    • POUT=3 W mith 17dB gain@500 MHz/12.5 V
    • New leadless plastic package
    • ESD protection
    • Supplied in tape and reel of 3 K units
    • In compliance with 2002/95/EC european directive

EDA Symbols, Footprints and 3D Models

STMicroelectronics - PD55003L-E

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
PD55003L-E
Active
PowerFLAT 5x5 HV Industrial Ecopack2

PD55003L-E

Package:

PowerFLAT 5x5 HV

Material Declaration**:

Marketing Status

Active

Package

PowerFLAT 5x5 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors