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  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optmized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
    • New RF plastic package

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Evaluation Tools

    • Part Number

      200 W / 1030 MHz IFF Mode-S reference design using PD57002-E, PD57018-E and 2x PD57060-E

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS4469
      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      4.1
      509.64 KB
      PDF
      DS4469

      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

    • Description Version Size Action
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      PD57060-E ADS model 1.0
      8.89 KB
      ZIP

      PD57060-E ADS model

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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