PD84010-E

Obsolete
Design Win

RF Power LDMOS transistor

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Product overview

Description

The PD84010-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84010-E’s superior linearity performance makes it an ideal solution for portable radio applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

  • All features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

EDA Symbols, Footprints and 3D Models

STMicroelectronics - PD84010-E

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