ST50V10200

Obsolete
Design Win

200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor

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Product overview

Description

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - ST50V10200

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Symbols

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Footprints

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3D models