ST50V10200

Active

RF Power LDMOS transistor HF to 1.5GHz

Download datasheet
Overview
Online design
Sample & Buy
Solutions
Documentation
CAD Resources
Tools & Software
Quality & Reliability
Get Started
Partner products
Sales Briefcase

Product overview

Description

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.
  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC

Recommended for you

EDA Symbols, Footprints and 3D Models

STMicroelectronics - ST50V10200

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
min
max
ST50V10200 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Loose Piece M246 - 200

ST50V10200

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Loose Piece

Package

M246

Operating Temperature (°C)

(min)

-

(max)

200

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors