ST50V10200

Active

200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor

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Product overview

Description

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.
  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC

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EDA Symbols, Footprints and 3D Models

STMicroelectronics - ST50V10200

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
ST50V10200
Active
M246 Industrial Ecopack1

ST50V10200

Package:

M246

Material Declaration**:

PDF XML

Marketing Status

Active

Package

M246

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
min
max
ST50V10200 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Loose Piece M246 - 200

ST50V10200

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Loose Piece

Package

M246

Operating Temperature (°C)

(min)

-

(max)

200

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors