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  • The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • Integrated ESD protection – HBM Class 2
    • POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz
    • BeO free package
    • In compliance with European Directive 2002/95/EC

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Technical Documentation

    • Description Version Size Action
      DS12437
      RF Power LDMOS transistor HF up to 1.5 GHz
      2.0
      297.65 KB
      PDF
      DS12437

      RF Power LDMOS transistor HF up to 1.5 GHz

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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