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  • The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • Integrated ESD protection – HBM Class 2
    • POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz
    • BeO free package
    • In compliance with European Directive 2002/95/EC

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00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS12437
      RF Power LDMOS transistor HF up to 1.5 GHz
      2.0
      297.65 KB
      PDF
      DS12437

      RF Power LDMOS transistor HF up to 1.5 GHz

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      114.52 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness

Sample & Buy

Part Number
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Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
min
max
ST9060C No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Loose Piece M243 - -

ST9060C

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Loose Piece

Package

M243

Operating Temperature (°C)

(min)

-

(max)

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors