ST9060C

NRND
Design Win

RF Power LDMOS transistor HF up to 1.5 GHz

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Product overview

Description

The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats.

  • All features

    • Excellent thermal stability
    • Common source configuration
    • Integrated ESD protection – HBM Class 2
    • POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz
    • BeO free package
    • In compliance with European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - ST9060C

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3D models

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
ST9060C
NRND
M243 Industrial Ecopack1

ST9060C

Package:

M243

Material Declaration**:

Marketing Status

NRND

Package

M243

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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ST9060C
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ST9060C NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors