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SiC MOSFETs

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Create more efficient and compact systems than ever with STPOWER SiC MOSFETs

Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.

Main features of our SiC MOSFETs include:

  • Automotive-grade (AG) qualified devices
  • Very high temperature handling capability (max. TJ = 200 °C)
  • Very high switching frequency operation and very low switching losses
  • Low on-state resistance
  • Gate drive compatible with existing ICs
  • Very fast and robust intrinsic body diode

Our SiC MOSFET portfolio includes state-of-the-art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed to meet the stringent requirements of automotive and industrial applications.

sic mosfet

In addition to the latest packaging technologies, our SiC MOSFETs, including G3 devices, are available as bare die. Compliant with the most stringent automotive requirements including Wafer-Level Burn-In (WLBI) and Known Good Die (KGD) processes, bare die are available as reconstructed wafers or in tape & reel packaging.

Check our Innovation and Technology page about SiC.

Featured Products

Higher power density with the Gen2 1200 V STPOWER SiC MOSFET in a tiny H2PAK-7 SMD package

Combining outstanding performance with package compactness , the new SCTH60N120G2-7 enables smaller and more efficient systems in high-end industrial applications

New highly versatile 650 V STPOWER SiC MOSFET in 4-lead HiP247 package

Enabling excellent switching performance thanks to its source sensing pin, the SCTWA35N65G2V-4 covers a wide range of industrial applications

1200 V silicon-carbide diodes, Industrial and automotive-grade

Unbeatable efficiency and robustness

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