Single-chip half-bridge gate driver for Enhancement mode GaN FETs
Suitable for designs with bus voltages up to 500 V, the STDRIVEG600 is designed for driving high-speed Enhancement mode GaN FETs or N-channel power MOSFETs thanks to its high current capability, short propagation delay and ability to operate with supply voltages as low as 5 V.
The STDRIVEG600 features UVLO protection on both the lower and upper driving sections, preventing power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontrollers and DSPs.
Key features of STDRIVEG600
- dV/dt immunity ±200 V/ns
- Driver current capability:
- 1.3/2.4 A source/sink typ @ 25 °C, 6 V
- 5.5/6 A source/sink typ @ 25 °C, 15 V
- Separate turn-on and turn-off gate driver pins
- 45 ns propagation delay with tight matching
- 3.3 and 5 V TTL/CMOS inputs with hysteresis
- Interlocking function
- UVLO on low- and high-side sections
- Dedicated pin for shutdown function
- Over temperature protection
Application examples
High-voltage PFC 
DC-DC and DC-AC converters 
Switch-mode power supplies (SMPS) 
UPS systems 
Solar power inverters 
Motor drivers for home appliances, factory automation and industrial drives How to test & prototype with STDRIVEG600
Choose a development kit to start testing the capabilities and features of STDRIVEG600:
EVSTDRIVEG600DG
Easy-to-use STDRIVEG600 demo board an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers such as microcontrollers. Quickly evaluate your designs based on the STDRIVEG600 for driving Enhancement mode GaN HEMTs.
EVSTDRIVEG600DM
Easy-to-use STDRIVEG600 demo board an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers such as microcontrollers. Quickly evaluate your designs based on the STDRIVEG600 for driving a 600V MDmesh DM2 Power MOSFET with fast recovery diode.
