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In a two-transistor forward the two transistors of the primary are switched on and power is transferred to the secondary winding of the transformer and then to the output capacitor and the load. When switched off, the diodes in the primary clamp the peak voltages seen by the transistors at the input voltage and thus reduce stress at the same time.

The two-transistor forward topology is often used in server and telecom switch mode power supplies (SMPS) as a main stage DC-DC converter and in arc-welding equipment.

To help developers fully exploit the benefits of two-transistors forward converters, ST offers a range of power MOSFETs and rectifiers; high-voltage and galvanically isolated gate drivers; primary PWM and synchronous rectification controllers; as well as high-performance STM32 microcontrollers – with an extended range of dedicated peripherals including high-resolution PWM timers and high-speed ADCs – together with our hardware and software evaluation and development tools as well as reference designs.

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      AN1768
      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES
      1.1
      46.82 KB
      PDF
      AN2025
      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION
      1.1
      147.59 KB
      PDF
      AN604
      Calculation of conduction losses in a power rectifier
      3.2
      137.74 KB
      PDF
      AN4021
      Calculation of reverse losses in a power diode
      1.0
      120.47 KB
      PDF
      AN1453
      NEW FAMILY OF 150V POWER SCHOTTKY
      1.1
      131.48 KB
      PDF
      AN5046
      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
      4.0
      4.82 MB
      PDF
      AN5088
      Rectifiers thermal management, handling and mounting recommendations
      2.0
      2.32 MB
      PDF
      AN443
      SERIES OPERATION ON FAST RECTIFIERS
      2.1
      202.48 KB
      PDF
      AN869
      Tj max limit of Schottky diodes
      2.2
      60.9 KB
      PDF
      AN4638
      Welding machines: V and HB series IGBTs on two-switch forward converters
      1.0
      724.64 KB
      PDF
      AN1768

      ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES

      AN2025

      CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION

      AN604

      Calculation of conduction losses in a power rectifier

      AN4021

      Calculation of reverse losses in a power diode

      AN1453

      NEW FAMILY OF 150V POWER SCHOTTKY

      AN5046

      Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages

      AN5088

      Rectifiers thermal management, handling and mounting recommendations

      AN443

      SERIES OPERATION ON FAST RECTIFIERS

      AN869

      Tj max limit of Schottky diodes

      AN4638

      Welding machines: V and HB series IGBTs on two-switch forward converters

Presentations & Training Material

    • Description Version Size Action
      Primary side regulation controllers portfolio
      1.1 MB
      PDF

      Primary side regulation controllers portfolio

Publications and Collaterals

    • Description Version Size Action
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
      PDF
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      755.53 KB
      PDF
      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series 1.0
      516.44 KB
      PDF
      Field-Effect Rectifier Diodes Advantageously replace Schottky (60V and 100V) 1.0
      1.29 MB
      PDF

      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series

      Field-Effect Rectifier Diodes Advantageously replace Schottky (60V and 100V)

    • Description Version Size Action
      Brochure Power management guide 10.2018
      4.42 MB
      PDF

      Brochure Power management guide

eDesignSuite

Converter

Input

V This option is required. And must be less than or equal to Volt. Max [V]
V This option is required. And must be greater than or equal to Volt. Min [V]

Output Power

V This option is required and must be a number.
A This option is required and must be a number.

Diodes and Rectifiers

Part number Description
FERD20U60DJFD 60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)
FERD40H100S 100 V, 40 A Field-Effect Rectifier Diode (FERD)
STPS10150C 150 V, 10 A dual Power Schottky Rectifier
STPSC16H065A 650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
STPSC5H12 1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
STTH3002C 200 V, 30 A dual Ultrafast Diode
Part number
60 V, 20 A PowerFLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)
100 V, 40 A Field-Effect Rectifier Diode (FERD)
150 V, 10 A dual Power Schottky Rectifier
650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
200 V, 30 A dual Ultrafast Diode

Power Management

Part number Description
L5991 Current Mode PWM
Part number
Current Mode PWM

Power Transistors

Part number Description
STB5N80K5 N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
STF140N6F7 N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package
STF24N60M2 N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
STGP20V60F Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
STGW60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STH140N8F7-2 N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
STP40N60M2 N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package
Part number
N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package