VNB10N07

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Design Win

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

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Product overview

Description

The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

  • All features

    • ESD PROTECTION
    • DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
    • COMPATIBLE WITH STANDARD POWER MOSFET
    • LINEAR CURRENT LIMITATION
    • SHORT CIRCUIT PROTECTION
    • THERMAL SHUT DOWN
    • LOW CURRENT DRAWN FROM INPUT PIN
    • DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
    • INTEGRATED CLAMP

Circuit Diagram

EDA Symbols, Footprints and 3D Models

STMicroelectronics - VNB10N07

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
VNB10N07TR-E
Active
D2PAK Automotive Ecopack1 (*)

VNB10N07TR-E

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1 (*)

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors