STPSC10H065BY-TR

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Automotive 650 V, 10 A DPAK Silicon Carbide Power Schottky Diode

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Product overview

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.

  • All features

    • AEC-Q101 qualified
    • No reverse recovery charge in application current range
    • Switching behavior independent of temperature
    • Recommended to PFC applications
    • PPAP capable
    • ECOPACK compliant component

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC10H065BY-TR

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STPSC10H065BY-TR
Active
DPAK Automotive Ecopack2

STPSC10H065BY-TR

Package:

DPAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

DPAK

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STPSC10H065BY-TR
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STPSC10H065BY-TR Active

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Part Number:

STPSC10H065BY-TR

Operating Temperature (°C)

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Junction Temperature (°C) (max):

175

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors