High power NPN epitaxial planar bipolar transistor

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  • The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

    Key Features

    High breakdown voltage VCEO = 140 V


    Typical ft = 20 MHz
    Fully characterized at 125 oC

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Part Number
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Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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2SD1047 TO-3P Tube
Active
- EAR99 KOREA (south) Check Availability

Distributor availability of2SD1047

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 600 1 Order Now
MOUSER WORLDWIDE 520 1 Order Now
Farnell Element14 EUROPE 3 1 Order Now

Distributor reported inventory date: 2019-03-25

Distributor Name

DIGIKEY

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

520

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

3

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-03-25

Buy direct

2SD1047

Package

TO-3P

Packing Type

Tube

Unit Price (US$)

*

Distributor availability of2SD1047

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 600 1 Order Now
MOUSER WORLDWIDE 520 1 Order Now
Farnell Element14 EUROPE 3 1 Order Now

Distributor reported inventory date: 2019-03-25

Distributor Name

DIGIKEY

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

520

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

3

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-03-25

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

KOREA (south)

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

00 Files Selected

Technical Documentation

    • Description Version Size Action
      DS7187
      High power NPN epitaxial planar bipolar transistor
      1.1
      185.24 KB
      PDF
      DS7187

      High power NPN epitaxial planar bipolar transistor

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
2SD1047
Active
TO-3P Industrial Ecopack1

2SD1047

Package:

TO-3P

Material Declaration**:

Marketing Status

Active

Package

TO-3P

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.