2SD1047

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High power NPN epitaxial planar bipolar transistor

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Product overview

Description

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

  • All features

    • High breakdown voltage VCEO = 140 V
    • Typical ft = 20 MHz
    • Fully characterized at 125 oC

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STMicroelectronics - 2SD1047

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
2SD1047
Active
TO-3P Industrial Ecopack2

2SD1047

Package:

TO-3P

Material Declaration**:

Marketing Status

Active

Package

TO-3P

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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2SD1047 Available at distributors

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Active
EAR99 NEC Tube TO-3P - - SOUTH KOREA

2SD1047 Active

Package:
TO-3P
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

2SD1047

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

SOUTH KOREA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors