Product overview
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
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All features
- High breakdown voltage VCEO = 140 V
- Typical ft = 20 MHz
- Fully characterized at 125 oC
EDA Symbols, Footprints and 3D Models
STMicroelectronics - 2SD1047
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