Product overview
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
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All features
- High breakdown voltage VCEO = 140 V
- Typical ft = 20 MHz
- Fully characterized at 125 oC
EDA Symbols, Footprints and 3D Models
STMicroelectronics - 2SD1047
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| 2SD1047 | Active | TO-3P | Industrial | Ecopack2 | |
2SD1047
Package:
TO-3PMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| 2SD1047 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tube | TO-3P | - | - | SOUTH KOREA | | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors