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  • The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

    Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.

    Key Features

    • High voltage capability
    • Minimum lot-to-lot spread for reliable operation
    • Low spread of dynamic parameters
    • Very high switching speed

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Part Number
Package
Packing Type
Marketing Status
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
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BUL741 TO-220AB Tube
Active
EAR99 CHINA No availability of distributors reported, please contact our sales office

BUL741

Package

TO-220AB

Packing Type

Tube

Budgetary Price (US$)*/Qty

Marketing Status

Active

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS5224
      High voltage fast-switching NPN power transistors
      3.2
      330.37 KB
      PDF
      DS5224

      High voltage fast-switching NPN power transistors

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
BUL741
Active
TO-220AB Industrial Ecopack2

BUL741

Package:

TO-220AB

Material Declaration**:

Marketing Status

Active

Package

TO-220AB

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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