BULD118D

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High voltage fast-switching NPN power transistor

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Product overview

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

  • All features

    • INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
    • LOW SPREAD OF DYNAMIC PARAMETERS
    • HIGH VOLTAGE CAPABILITY
    • VERY HIGH SWITCHING SPEED
    • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

EDA Symbols, Footprints and 3D Models

STMicroelectronics - BULD118D

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
BULD118D-1
Active
IPAK Industrial Ecopack2

BULD118D-1

Package:

IPAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (US)
ECCN (EU)
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Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
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BULD118D-1 Available at distributors

Distributor availability of BULD118D-1

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Active
EAR99 NEC Tube IPAK - - CHINA

BULD118D-1 Active

Package:
IPAK
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

BULD118D-1

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors