A very low gate charge (Qg) combined with an excellent output capacitance (Coss) profile make ST's MDmesh M2 series of super-junction MOSFETs ideal for use in resonant-type supplies (LLC converters).
With a breakdown voltage ranging from 400 V to 650 V, the MDmesh M2 N-channel SJ MOSFETs are available in a wide range of package options, including the new 4-lead TO247-4 which features a dedicated control pin for increased switching efficiency, the 1-mm-high surface-mount PowerFLAT 8x8 HV and the PowerFLAT 5x6 HV featuring an exposed metal drain pad for efficient heat dissipation. These power MOSFETs belong to the STPOWER family.
STPOWER MOSFET key features and benefits
- Extremely low Qg for increased efficiency
- Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)
Our wide STPOWER product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.