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SCT30N120

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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

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Product overview

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

  • All features

    • Very tight variation of on-resistance vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
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Related Applications

Industrial

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Product Specifications (1)

Resource title
Latest update
DS9011 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package 11.0
22 May 2017
22 May 2017
DS9011 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package 11.0

Application Notes (3)

Resource title
Latest update
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
23 Apr 2021
23 Apr 2021
AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
15 Jul 2019
15 Jul 2019
AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
AN3152 The right technology for solar converters 1.4
13 Sep 2018
13 Sep 2018
AN3152 The right technology for solar converters 1.4

Technical Notes & Articles (2)

Resource title
Latest update
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
03 Apr 2020
03 Apr 2020
TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
TN1340 Recommendation for die sintering with Ag finishing 1.0
22 Sep 2020
22 Sep 2020
TN1340 Recommendation for die sintering with Ag finishing 1.0

User Manuals (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

Flyers (5)

Resource title
Latest update
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
01 Feb 2021
01 Feb 2021
STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
14 Oct 2020
14 Oct 2020
STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
15 May 2020
15 May 2020
SiC MOSFET, the real breakthrough in high-voltage switching 1.0
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
30 Apr 2021
30 Apr 2021
SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

Brochures (1)

Resource title
Latest update
Electric vehicle (EV) ecosystem 1.1
23 Mar 2020
23 Mar 2020
Electric vehicle (EV) ecosystem 1.1

Conference Papers (5 of 8)

Resource title
Latest update
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
23 Jul 2018
23 Jul 2018
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
29 Apr 2021
29 Apr 2021
Capability of SiC MOSFETs under Short-Circuit tests and development of a Thermal Model by Finite Element Analysis 1.0
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
23 Mar 2020
23 Mar 2020
Cost benefits of a SiC MOSFET-based high frequency converter 1.0
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
25 Jul 2018
25 Jul 2018
Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
25 Jul 2018
25 Jul 2018
SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
23 Jul 2018
23 Jul 2018
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
23 Jul 2018
23 Jul 2018
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
Wide bandgap materials: revolution in automotive power electronics 1.0
23 Mar 2020
23 Mar 2020
Wide bandgap materials: revolution in automotive power electronics 1.0
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EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCT30N120

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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SPICE models (1)

Resource title
Latest update
SCT30N120 PSpice model 2.0
06 Nov 2014
06 Nov 2014
SCT30N120 PSpice model 2.0

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT30N120
Active
HIP247 Industrial Ecopack2

SCT30N120

Package:

HIP247

Material Declaration**:

More Info

Marketing Status

Active

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
Order from Distributors
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
SCT30N120 Available at 5 distributors

Distributor availability ofSCT30N120

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 575 1 Order Now
RS COMPONENTS EUROPE 272 1 Order Now
FUTURE WORLDWIDE 3226 1 Order Now
MOUSER WORLDWIDE 156 1 Order Now
Farnell Element14 EUROPE 430 1 Order Now

Distributor reported inventory date: 2021-05-06

Distributor Name

DIGIKEY

Stock

575

Min.Order

1

Region

WORLDWIDE Order Now

RS COMPONENTS

Stock

272

Min.Order

1

Region

EUROPE Order Now

FUTURE

Stock

3226

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

156

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

430

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2021-05-06

Free Sample Buy Direct
Active
EAR99 NEC Tube HIP247 - - CHINA 22.0 / 1k

SCT30N120

Marketing Status

Active

ECCN (US)

EAR99
More Info

Budgetary Price (US$)*/Qty

22.0 / 1k

Distributor availability ofSCT30N120

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 575 1 Order Now
RS COMPONENTS EUROPE 272 1 Order Now
FUTURE WORLDWIDE 3226 1 Order Now
MOUSER WORLDWIDE 156 1 Order Now
Farnell Element14 EUROPE 430 1 Order Now

Distributor reported inventory date: 2021-05-06

Distributor Name

DIGIKEY

Stock

575

Min.Order

1

Region

WORLDWIDE Order Now

RS COMPONENTS

Stock

272

Min.Order

1

Region

EUROPE Order Now

FUTURE

Stock

3226

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

156

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

430

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2021-05-06

ECCN (EU)

NEC

Packing Type

Tube

Package

HIP247

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

22.0 / 1k

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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