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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Key Features
- Very fast and robust intrinsic body diode
- Low capacitance
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| SCTH35N65G2V-7 | Active | H2PAK-7 | Industrial | Ecopack2 | |
SCTH35N65G2V-7
Package:
H2PAK-7Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|
| SCTH35N65G2V-7 | 3 distributors | H2PAK-7 | Tape And Reel | Active | EAR99 | CHINA | 15.0 / 1k |
SCTH35N65G2V-7
Package
H2PAK-7Packing Type
Tape And ReelBudgetary Price (US$)*/Qty
15.0 / 1k(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
