This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
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