SCTW90N65G2V

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    Key Features

    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitances

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Related Applications

Power Supplies and Converters

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Technical Documentation

    • Description Version Size Action
      DS11832
      Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package
      5.0
      397.46 KB
      PDF
      DS11832

      Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package

    • Description Version Size Action
      AN4671
      How to fine tune your SiC MOSFET gate driver to minimize losses
      1.1
      555.54 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      How to fine tune your SiC MOSFET gate driver to minimize losses

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • Description Version Size Action
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description Version Size Action
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      SiC MOSFET, the real breakthrough in high-voltage switching 1.0
      174.33 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      ST MOSFET Finder, the new app for Android and iOS

      SiC MOSFET, the real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • Description Version Size Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • Description Version Size Action
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTW90N65G2V
Active
HIP247 Industrial Ecopack2

SCTW90N65G2V

Package:

HIP247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

HIP247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (US)
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Budgetary Price (US$)*/Qty
SCTW90N65G2V Available at 5 distributors

Distributor availability ofSCTW90N65G2V

Distributor Name
Region Stock Min. Order Third party link
FUTURE WORLDWIDE 5 1 Order Now
ARROW EUROPE 510 0 Order Now
ARROW AMERICA 68 600 Order Now
Farnell Element14 EUROPE 15 1 Order Now
RUTRONIK EUROPE 30 30 Order Now

Distributor reported inventory date: 2020-07-08

Distributor Name

FUTURE

Stock

5

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

510

Min.Order

0

Region

EUROPE Order Now

ARROW

Stock

68

Min.Order

600

Region

AMERICA Order Now

Farnell Element14

Stock

15

Min.Order

1

Region

EUROPE Order Now

RUTRONIK

Stock

30

Min.Order

30

Region

EUROPE Order Now

Distributor reported inventory date: 2020-07-08

HIP247 Tube
Active
EAR99 CHINA 39.0 / 1k

SCTW90N65G2V

Package

HIP247

Packing Type

Tube

Budgetary Price (US$)*/Qty

39.0 / 1k

Distributor availability ofSCTW90N65G2V

Distributor Name
Region Stock Min. Order Third party link
FUTURE WORLDWIDE 5 1 Order Now
ARROW EUROPE 510 0 Order Now
ARROW AMERICA 68 600 Order Now
Farnell Element14 EUROPE 15 1 Order Now
RUTRONIK EUROPE 30 30 Order Now

Distributor reported inventory date: 2020-07-08

Distributor Name

FUTURE

Stock

5

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

510

Min.Order

0

Region

EUROPE Order Now

ARROW

Stock

68

Min.Order

600

Region

AMERICA Order Now

Farnell Element14

Stock

15

Min.Order

1

Region

EUROPE Order Now

RUTRONIK

Stock

30

Min.Order

30

Region

EUROPE Order Now

Distributor reported inventory date: 2020-07-08

Marketing Status

Active

Budgetary Price (US$)* / Qty

39.0 / 1k

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors