Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package

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  • This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

    Key Features

    • Very tight variation of on-resistance vs. temperature
    • Slight variation of switching losses vs. temperature
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance

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SCTWA20N120 TO-247 long leads Tube
Active
10.5 1000 EAR99 CHINA No availability of distributors reported, please contact our sales office

SCTWA20N120

Package

TO-247 long leads

Packing Type

Tube

Unit Price (US$)

10.5*

Marketing Status

Active

Unit Price (US$)

10.5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS11689
      Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package
      1.0
      685.79 KB
      PDF
      DS11689

      Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package

    • Description Version Size Action
      AN4671
      How to fine tune your SiC MOSFET gate driver to minimize losses
      1.1
      555.54 KB
      PDF
      AN5355
      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp
      1.0
      6.39 MB
      PDF
      AN3152
      The right technology for solar converters
      1.4
      416.3 KB
      PDF
      AN4671

      How to fine tune your SiC MOSFET gate driver to minimize losses

      AN5355

      Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp

      AN3152

      The right technology for solar converters

    • Description Version Size Action
      TA0349
      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
      2.2
      2.34 MB
      PDF
      TA0349

      Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

Publications and Collaterals

    • Description Version Size Action
      SiC MOSFET: The real breakthrough in high-voltage switching 1.0
      401.67 KB
      PDF
      SiC MOSFETs: The real breakthrough in high-voltage switching 3.0
      1.52 MB
      PDF

      SiC MOSFET: The real breakthrough in high-voltage switching

      SiC MOSFETs: The real breakthrough in high-voltage switching

    • Description Version Size Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

    • Description Version Size Action
      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
      760.82 KB
      PDF
      Cost benefits of a SiC MOSFET-based high frequency converter 1.0
      1.8 MB
      PDF
      Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
      582.21 KB
      PDF
      SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
      1.06 MB
      PDF
      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
      980.73 KB
      PDF
      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
      1.35 MB
      PDF
      Wide bandgap materials: revolution in automotive power electronics 1.0
      792.49 KB
      PDF

      3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices

      Cost benefits of a SiC MOSFET-based high frequency converter

      Design rules for paralleling of Silicon Carbide Power MOSFETs

      SiC and Silicon MOSFET solution for high frequency DC-AC converters

      Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

      Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate

      Wide bandgap materials: revolution in automotive power electronics

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA20N120
Active
TO-247 long leads Industrial Ecopack2

SCTWA20N120

Package:

TO-247 long leads

Material Declaration**:

Marketing Status

Active

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.