SGT070R70HTO

Proposal
Design Win

700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor

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Product overview

Description

The SGT070R70HTO is a 700 V, 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

  • All features

    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SGT070R70HTO

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SGT070R70HTO
Proposal
TO-LL Industrial -

SGT070R70HTO

Package:

TO-LL

Material Declaration**:

Marketing Status

Proposal

Package

TO-LL

Grade

Industrial

RoHS Compliance Grade

-

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SGT070R70HTO
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SGT070R70HTO Proposal

Budgetary Price (US$)*/Qty:
-
Package:
Packing Type:
RoHS:
Country of Origin:
ECCN (US):
ECCN (EU):

Part Number:

SGT070R70HTO

Operating Temperature (°C) (max):

150

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors