STB30N65DM6AG
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Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

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Product overview

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast‑recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • All features

    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected

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STMicroelectronics - STB30N65DM6AG

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Quality and Reliability

Part Number RoHS Compliance Grade Grade Material Declaration**
STB30N65DM6AG
Ecopack2
Automotive

STB30N65DM6AG

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Automotive

Material Declaration**:

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RoHS Compliance Grade

Ecopack2

Grade

Automotive

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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