Product overview
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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All features
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB80N4F6AG
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STB80N4F6AG | Active | D2PAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STB80N4F6AG | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tape and Reel | D2PAK | - | - | CHINA | | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors