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This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Featured Videos
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
All tools & software
All resources
Product Specifications (1)
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17 Feb 2016 |
17 Feb 2016
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Application Notes (4)
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13 Sep 2018 |
13 Sep 2018
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07 Jan 2019 |
07 Jan 2019
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08 Nov 2019 |
08 Nov 2019
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13 Sep 2018 |
13 Sep 2018
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User Manuals (1)
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21 Oct 2016 |
21 Oct 2016
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Flyers (4)
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22 Jan 2020 |
22 Jan 2020
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25 Sep 2019 |
25 Sep 2019
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08 May 2020 |
08 May 2020
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13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STB80N4F6AG |
Active
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D2PAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STB80N4F6AG | No availability of distributors reported, please contact our sales office | Buy Direct |
Active
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EAR99 | NEC | Tape And Reel | D2PAK | - | - | CHINA |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors