This Power MOSFET is the latest development of STMicroelectronics unique \"single feature size\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.
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STMicroelectronics - STD12NF06T4
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