STE40NC60
Active
Design Win
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET

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Product overview

Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

  • All features

    • TYPICAL RDS(on) = 0.098 Ω
    • 100% AVALANCHE TESTED
    • EXTREMELY HIGH dv/dt CAPABILITY
    • GATE CHARGE MINIMIZED
    • NEW HIGH VOLTAGE BENCHMARK

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STE40NC60

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STE40NC60
Active
ISOTOP Industrial Ecopack2 - -

STE40NC60

Package:

ISOTOP

Material Declaration**:

Marketing Status

Active

Package

ISOTOP

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STE40NC60

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STE40NC60

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors