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This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
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Product Specifications (1)
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Application Notes (5 of 9)
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Technical Notes & Articles (1)
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| 13 Nov 2016 |
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User Manuals (1)
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Flyers (5 of 6)
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Brochures (1)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STFU24N60M2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STFU24N60M2 |
Active
|
TO-220FP ultra narrow leads | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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| min | max | |||||||||||
| STFU24N60M2 | 1 distributors | Free Sample Buy Direct |
Active
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EAR99 | NEC | Tube | TO-220FP ultra narrow leads | - | - | CHINA | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
