STG25M120F3D7

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1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 10 µs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

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STMicroelectronics - STG25M120F3D7

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Quality and Reliability

Part Number Marketing Status Grade Material Declaration**
STG25M120F3D7
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Industrial

STG25M120F3D7

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Material Declaration**:

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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STG25M120F3D7
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