STG25M120F3D7

Active

1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 10 µs of short-circuit withstand time
    • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C

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Part Number Marketing Status Grade Material Declaration**
STG25M120F3D7
Active
Industrial

STG25M120F3D7

Package:

Industrial

Material Declaration**:

PDF XML

Marketing Status

Active

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Part Number
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
STG25M120F3D7 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Not Applicable D.SCRIB.100% VI STAT -55 175 ITALY

STG25M120F3D7

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Not Applicable

Package

D.SCRIB.100% VI STAT

Operating Temperature (°C)

(min)

-55

(max)

175

Country of Origin

ITALY

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors