These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Recommended for you
|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|14 A, 600 V short-circuit rugged IGBT||D2PAK||Industrial||Ecopack2|| |
Package:14 A, 600 V short-circuit rugged IGBT
14 A, 600 V short-circuit rugged IGBT
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.