STGB19NC60HDT4

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19 A, 600 V, very fast IGBT with Ultrafast diode

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Product overview

Description

These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

  • All features

    • Low on-voltage drop (VCE(sat))
    • Very soft Ultrafast recovery anti-parallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGB19NC60HDT4

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB19NC60HDT4
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19 A, 600 V, very fast IGBT with Ultrafast diode D2PAK Industrial Ecopack2

STGB19NC60HDT4

Package:

19 A, 600 V, very fast IGBT with Ultrafast diode

Material Declaration**:

Marketing Status

Active

General Description

19 A, 600 V, very fast IGBT with Ultrafast diode

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB19NC60HDT4 Available at distributors

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EAR99 NEC Tape and Reel D2PAK -55 150

CHINA

19 A, 600 V, very fast IGBT with Ultrafast diode

STGB19NC60HDT4 Active

Package:
D2PAK
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STGB19NC60HDT4

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-55

Max:

150

Country of Origin:

CHINA

General Description:

19 A, 600 V, very fast IGBT with Ultrafast diode

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors