STGB4M65DF2

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Trench gate field-stop IGBT, M series 650 V, 4 A low loss

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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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Budgetary Price (US$)*/Qty
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STGB4M65DF2 D2PAK Tape And Reel
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EAR99 CHINA Trench gate field-stop IGBT, M series 650 V, 4 A low loss Check Availability

Distributor availability ofSTGB4M65DF2

Distributor Name
Region Stock Min. Order Third party link
ANGLIA Live EUROPE 50 1000 Order Now

Distributor reported inventory date: 2020-06-01

Distributor Name

ANGLIA Live

Stock

50

Min.Order

1000

Region

EUROPE Order Now

Distributor reported inventory date: 2020-06-01

STGB4M65DF2

Package

D2PAK

Packing Type

Tape And Reel

Budgetary Price (US$)*/Qty

Distributor availability ofSTGB4M65DF2

Distributor Name
Region Stock Min. Order Third party link
ANGLIA Live EUROPE 50 1000 Order Now

Distributor reported inventory date: 2020-06-01

Distributor Name

ANGLIA Live

Stock

50

Min.Order

1000

Region

EUROPE Order Now

Distributor reported inventory date: 2020-06-01

Marketing Status

Active

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS11391
      Trench gate field-stop IGBT, M series 650 V, 4 A low loss
      4.0
      1.13 MB
      PDF
      DS11391

      Trench gate field-stop IGBT, M series 650 V, 4 A low loss

    • Description Version Size Action
      AN4694
      EMC design guides for motor control applications
      1.0
      2.13 MB
      PDF
      AN4544
      IGBT datasheet tutorial
      1.1
      2.4 MB
      PDF
      AN4694

      EMC design guides for motor control applications

      AN4544

      IGBT datasheet tutorial

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGB4M65DF2 PSpice model 1.0
      2.72 KB
      ZIP

      STGB4M65DF2 PSpice model

Publications and Collaterals

    • Description Version Size Action
      650V HB series IGBTs; Innovative 4-lead package 1.0
      1.67 MB
      PDF
      ST IGBT FINDER: The new app for Android and iOS 1.0
      787.04 KB
      PDF

      650V HB series IGBTs; Innovative 4-lead package

      ST IGBT FINDER: The new app for Android and iOS

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      Electric vehicle (EV) ecosystem 1.1
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      Electric vehicle (EV) ecosystem

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB4M65DF2
Active
Trench gate field-stop IGBT, M series 650 V, 4 A low loss D2PAK Industrial Ecopack2

STGB4M65DF2

Package:

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.