STGD3HF60HDT4

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4.5 A, 600 V very fast IGBT with Ultrafast diode

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Product overview

Description

These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.

  • All features

    • Minimal tail current
    • Low conduction and switching losses
    • Ultrafast soft recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGD3HF60HDT4

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGD3HF60HDT4
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4.5 A, 600 V very fast IGBT with Ultrafast diode DPAK Industrial Ecopack2

STGD3HF60HDT4

Package:

4.5 A, 600 V very fast IGBT with Ultrafast diode

Material Declaration**:

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Marketing Status

Active

General Description

4.5 A, 600 V very fast IGBT with Ultrafast diode

Package

DPAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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STGD3HF60HDT4 Available at distributors

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Active
EAR99 NEC Tape and Reel DPAK -55 150

CHINA

4.5 A, 600 V very fast IGBT with Ultrafast diode

STGD3HF60HDT4 Active

Package:
DPAK
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STGD3HF60HDT4

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-55

Max:

150

Country of Origin:

CHINA

General Description:

4.5 A, 600 V very fast IGBT with Ultrafast diode

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Distributor reported inventory date:

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors