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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
General Description
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STGD6M65DF2 DPAK Tape And Reel
Active
- - EAR99 CHINA Trench gate field-stop IGBT, M series 650 V, 6 A low loss No availability of distributors reported, please contact our sales office

STGD6M65DF2

Package

DPAK

Packing Type

Tape And Reel

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

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      DS11406
      Trench gate field-stop IGBT, M series 650 V, 6 A low loss
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      DS11406

      Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGD6M65DF2 PSpice model 1.0
      2.62 KB
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      STGD6M65DF2 PSpice model

Publications and Collaterals

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      650V HB series IGBTs; Innovative 4-lead package 1.0
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Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGD6M65DF2
Active
Trench gate field-stop IGBT, M series 650 V, 6 A low loss DPAK Industrial Ecopack2

STGD6M65DF2

Package:

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Package

DPAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.