Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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All features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 15 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGP15M65DF2
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Symbols
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3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 21 Mar 2016 | 21 Mar 2016 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGP15M65DF2 | Active | Trench gate field-stop IGBT M series, 650 V, 15 A low loss | TO-220 | Industrial | Ecopack2 | |
STGP15M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V, 15 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Country of Origin | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGP15M65DF2 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tube | TO-220 | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V, 15 A low loss | | CHINA | Trench gate field-stop IGBT M series, 650 V, 15 A low loss | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors