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STGSH50M120D

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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode

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Product overview

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is optimized both in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency and power density in industrial drives.

  • All features

    • Low-loss and short-circuit rugged IGBTs
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.8 V (typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient
    • Soft and fast-recovery antiparallel diode
    • Isolation rating of 3.4 kVrms/min
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STMicroelectronics - STGSH50M120D

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STGSH50M120D
Active
ACEPACK SMIT Industrial Ecopack2 - -

STGSH50M120D

Package:

ACEPACK SMIT

Material Declaration**:

More Info

Marketing Status

Active

Package

ACEPACK SMIT

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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