This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
- Low on-voltage drop (VCE(sat))
- Short circuit withstand time 10 μs
- Low Cres / Cies ratio (no cross conduction susceptibility)
- IGBT co-packaged with ultra fast free-wheeling diode
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|New short circuit rugged "K" series||TO-247||Industrial||Ecopack2|| |
Package:New short circuit rugged "K" series
New short circuit rugged "K" series
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.