Trench gate field-stop IGBT M series, 650 V 75 A low loss

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  • These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.65 V (typ.) @ IC = 75 A
    • Tight parameter distribution
    • Safer paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode
    • Maximum junction temperature: TJ = 175 °C

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
General Description
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STGW75M65DF2 TO-247 Tube
Active
5 1000 EAR99 CHINA Trench gate field-stop IGBT M series, 650 V 75 A low loss Check Availability

Distributor availability ofSTGW75M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 600 1 Order Now
MOUSER WORLDWIDE 543 1 Order Now

Distributor reported inventory date: 2019-11-06

Distributor Name

DIGIKEY

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

543

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-11-06

Get sample

STGW75M65DF2

Package

TO-247

Packing Type

Tube

Unit Price (US$)

5.0*

Distributor availability ofSTGW75M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 600 1 Order Now
MOUSER WORLDWIDE 543 1 Order Now

Distributor reported inventory date: 2019-11-06

Distributor Name

DIGIKEY

Stock

600

Min.Order

1

Region

WORLDWIDE Order Now

MOUSER

Stock

543

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-11-06

Marketing Status

Active

Unit Price (US$)

5

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 75 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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      DS11403
      Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages
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      DS11403

      Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages

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HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGW75M65DF2 PSpice model 1.0
      2.81 KB
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      STGW75M65DF2 PSpice model

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Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGW75M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 75 A low loss TO-247 Industrial Ecopack2

STGW75M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 75 A low loss

Package

TO-247

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.