-
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)= 1.55 V (typ.) @ IC= 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead free package
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWT20H65FB | TO-3P | Tube | Active | 2.1 | 1000 | EAR99 | KOREA (south) | Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
Featured Videos
Development Tools
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWT20H65FB | Active | Trench gate field-stop IGBT, HB series 650 V, 20 A high speed | TO-3P | Industrial | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
