Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Co-packed diode for protection
- Safe paralleling
- Low thermal resistance
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EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STGWT40HP65FB | Active | Trench gate field-stop 650 V, 40 A high-speed HB series IGBT | TO-3P | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
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min | max | ||||||||||||||
STGWT40HP65FB | | | distributors No availability of distributors reported, please contact our sales office |
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STGWT40HP65FB Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors