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  • These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

    Key Features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
    • Tight parameter distribution
    • Safe paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGWT60H65DFB

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWT60H65DFB
Active
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed TO-3P Industrial Ecopack2 (**)

STGWT60H65DFB

Package:

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Material Declaration**:

PDF XML

Marketing Status

Active

General Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Package

TO-3P

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (EU)
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Temperature (°C) Budgetary Price (US$)*/Qty
More info
min
max
STGWT60H65DFB Available at 5 distributors

Distributor availability ofSTGWT60H65DFB

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 289 1 Order Now
RS COMPONENTS EUROPE 136 1 Order Now
ARROW EUROPE 300 0 Order Now
MOUSER WORLDWIDE 2280 1 Order Now
Farnell Element14 EUROPE 290 1 Order Now

Distributor reported inventory date: 2020-12-03

Distributor Name

DIGIKEY

Stock

289

Min.Order

1

Region

WORLDWIDE Order Now

RS COMPONENTS

Stock

136

Min.Order

1

Region

EUROPE Order Now

ARROW

Stock

300

Min.Order

0

Region

EUROPE Order Now

MOUSER

Stock

2280

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

290

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2020-12-03

Free Sample Buy Direct
Active
EAR99 NEC Tube TO-3P -55 175 4.35 / 1k
MORE INFO

Country of Origin:

SOUTH KOREA

General Description:

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

STGWT60H65DFB

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

4.35 / 1k

Distributor availability ofSTGWT60H65DFB

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 289 1 Order Now
RS COMPONENTS EUROPE 136 1 Order Now
ARROW EUROPE 300 0 Order Now
MOUSER WORLDWIDE 2280 1 Order Now
Farnell Element14 EUROPE 290 1 Order Now

Distributor reported inventory date: 2020-12-03

Distributor Name

DIGIKEY

Stock

289

Min.Order

1

Region

WORLDWIDE Order Now

RS COMPONENTS

Stock

136

Min.Order

1

Region

EUROPE Order Now

ARROW

Stock

300

Min.Order

0

Region

EUROPE Order Now

MOUSER

Stock

2280

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

290

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2020-12-03

ECCN (EU)

NEC

Packing Type

Tube

Package

TO-3P

Operating Temperature (°C)

(min)

-55

(max)

175

Budgetary Price (US$)* / Qty

4.35 / 1k

Country of Origin

SOUTH KOREA

General Description

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors