STH12N120K5-2AG

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Design Win

Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET in an H2PAK-2 package

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Product overview

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

  • All features

    • AEC-Q101 qualified
    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STH12N120K5-2AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STH12N120K5-2AG
Active
H2PAK-2 Automotive Ecopack1

STH12N120K5-2AG

Package:

H2PAK-2

Material Declaration**:

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Marketing Status

Active

Package

H2PAK-2

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors