STL13N60M2

NRND
Design Win

N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

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Product overview

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

  • All features

    • Extremely low gate charge
    • Lower RDS(on)x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STL13N60M2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL13N60M2
NRND
PowerFLAT 5x6 HV Industrial Ecopack2

STL13N60M2

Package:

PowerFLAT 5x6 HV

Material Declaration**:

Marketing Status

NRND

Package

PowerFLAT 5x6 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STL13N60M2
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STL13N60M2 NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors