Product overview
Description
The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
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All features
- MSL1 grade
- 175 °C maximum operating junction temperature
- 100% avalanche tested
- Low gate charge Qg
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EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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SPICE models (1)
Resource title | Version | Latest update | ||
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7Z | 1.0 | 19 Feb 2024 | 19 Feb 2024 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STL160N10F8 | Active | PowerFLAT 5x6 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STL160N10F8 | | | distributors No availability of distributors reported, please contact our sales office |
STL160N10F8 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors